Qorvo® Lowers Telecom Infrastructure Costs with New Power-Efficient GaN-on-SiC Amplifier

Dual-transistor module delivers unparalleled performance for macro base station design

GREENSBORO, NC – August 10, 2017 – Qorvo^® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today introduced a new asymmetric Doherty amplifier that enables customers to achieve ultra-high levels of power efficiency in the design of wireless base station equipment. The next-generation gallium nitride on silicon carbide (GaN-on-SiC) solution features two transistors in a single package to maximize linearity, efficiency and gain, and ultimately reduce operating costs.

According to Eric Higham, Strategy Analytics service director, "GaN devices can handle more power than other high-frequency technologies like GaAs and InP, with better frequency performance characteristics than other power technologies like LDMOS."¹

Roger Hall, Qorvo's general manager, High Performance Solutions, said, "Today's telecommunications infrastructure design is all about achieving power efficiencies that reduce costs. Our customers tell us that the new GaN-on-SiC QPD2731 transistor achieves these goals as operators bring more capabilities online."

Customers are increasingly moving to GaN-on-SiC in order to realize significant improvements in performance, linearity and efficiency for wireless base stations compared to LDMOS and GaN-on-Si, which have poor thermal characteristics. The QPD2731 addresses this shift with pre-matched, discrete GaN-on-SiC High Electron Mobility Transistors (HEMTs). The new amplifier, currently available for sampling, provides the highest performance available in its operating range of 2.5 to 2.7 GHz.

The QPD2731 can be linearized by standard, commercially available, third-party DPD systems, as previously announced by Qorvo.

Qorvo offers a broad portfolio of GaN discrete transistor products with varying levels of power, voltage and frequency ratings, in both die-level and packaged solutions. More information about these products is available at: http://www.qorvo.com/products/discrete-transistors/gan-hemts.

About Qorvo

Qorvo (NASDAQ:QRVO) makes a better world possible by providing innovative RF solutions at the center of connectivity. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers' most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including advanced wireless devices, wired and wireless networks and defense radar and communications. We also leverage our unique competitive strengths to advance 5G networks, cloud computing, the Internet of Things, and other emerging applications that expand the global framework interconnecting people, places and things. Visit www.qorvo.com to learn how Qorvo connects the world.

Qorvo is a registered trademark of Qorvo, Inc. in the U.S. and in other countries.

¹ Semiconductor Engineering, RF GaN Gains Steam, July 25, 2016

This press release includes "forward-looking statements" within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives, representations and contentions and are not historical facts and typically are identified by use of terms such as "may," "will," "should," "could," "expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words, although some forward-looking statements are expressed differently. You should be aware that the forward-looking statements included herein represent management's current judgment and expectations, but our actual results, events and performance could differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of these forward-looking statements or publicly announce the results of any revisions to these forward-looking statements, other than as is required under the federal securities laws. Qorvo's business is subject to numerous risks and uncertainties, including variability in operating results, the inability of certain of our customers or suppliers to access their traditional sources of credit, our industry's rapidly changing technology, our dependence on a few large customers for a substantial portion of our revenue, a loss of revenue if contracts with the U.S. government or defense and aerospace contractors are canceled or delayed, our ability to implement innovative technologies, our ability to bring new products to market and achieve design wins, the efficient and successful operation of our wafer fabrication facilities, assembly facilities and test and tape and reel facilities, our ability to adjust production capacity in a timely fashion in response to changes in demand for our products, variability in manufacturing yields, industry overcapacity and current macroeconomic conditions, inaccurate product forecasts and corresponding inventory and manufacturing costs, dependence on third parties and our ability to manage platform providers and customer relationships, our dependence on international sales and operations, our ability to attract and retain skilled personnel and develop leaders, the possibility that future acquisitions may dilute our shareholders' ownership and cause us to incur debt and assume contingent liabilities, fluctuations in the price of our common stock, additional claims of infringement on our intellectual property portfolio, lawsuits and claims relating to our products, security breaches and other similar disruptions compromising our information and exposing us to liability, and the impact of stringent environmental regulations. These and other risks and uncertainties, which are described in more detail in Qorvo's most recent Annual Report on Form 10-K and in other reports and statements filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.