QPD0030

    DC - 4 GHz, 45 Watt, 48 V GaN RF Power Transistor

    Key Features

    • Frequency range: DC to 4 GHz
    • Drain voltage: 48V
    • Output power (P3dB): 49W
    • Maximum drain efficiency: 72%
    • 3x4mm QFN

    Qorvo's QPD0030 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor.

    The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 can also be used as a driver in a macrocell base station power amplifier.The wide bandwidth of the QPD0030 makes it suitable for many differenct applications from DC to 4 GHz.

    QPD0030 can deliver PSAT of 49 W at 48 V operation.

    Typical Applications

      • Active Antennas
      • Macro Cell Base Station
      • Micro Cell Base Station
      • Wireless Communications
    Frequency Min(MHz) DC
    Frequency Max(MHz) 4,000
    Gain(dB) 22
    Psat(dBm) 46.9
    PAE(%) 72
    VD(V) 48
    Idq(mA) 85
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Network Infrastructure > Wireless Infrastructure > Cellular Infrastructure Base Station

      Cellular Infrastructure Base Station