QPD0050

    DC - 3.6 GHz, 75 Watt, 48 V GaN RF Power Transistor

    Key Features

    • Frequency range: DC to 3.6 GHz
    • Drain voltage: 48V
    • Maximum output power (P3dB): 82W @ 2.6GHz
    • Maximum drain efficiency: 78.5% @ 2.6GHz
    • Efficiency-Tuned P3dB gain: 19.4dB @ 2.6GHz
    • 7.2 x 6.6mm DFN

    Qorvo's QPD0050 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor.

    The QPD0050 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0050 can also be used as a driver in a macrocell base station power amplifier.

    The wide bandwidth of the QPD0050 makes it suitable for many different applications from DC to 3.6 GHz. QPD0050 can deliver PSAT of 82 W at 48 V operation at 2.6GHz

    Typical Applications

      • Active Antennas
      • Micro Cell Base Station
      • Macro Cell Base Station
      • Wireless Communications
    Frequency Min(MHz) DC
    Frequency Max(MHz) 3,600
    Gain(dB) 22.5
    Psat(dBm) 48.7
    PAE(%) 80
    VD(V) 48
    Idq(mA) 130
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Network Infrastructure > Wireless Infrastructure > Cellular Infrastructure Base Station

      Cellular Infrastructure Base Station