QPD0060
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
Key Features
- Frequency range: DC to 3.6 GHz
- Drain voltage: 48V
- Output power (P3dB): 90W
- Maximum drain efficiency: 73%
- 7.2 x 6.6 mm DFN
The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor.
The QPD0060 can be used in Doherty architecture for the final stage of a base station amplifier for small cell, microcell, and active antenna systems. The QPD0060 can also be used as a driver in a macrocell base station power amplifier.
The wide bandwidth of the QPD0060 makes it suitable for many different applications from DC to 2.7 GHz. QPD0060 can deliver PSAT of 89.1 W at +48 V operation at 2.1 GHz.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
Typical Applications
- Active Antennas
- Macro Cell Base Station
- Micro Cell Base Station
- Wireless Communications
Product Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 3,600 |
| Gain(dB) | 25 |
| Psat(dBm) | 49.5 |
| PAE(%) | 73 |
| Vd(V) | 48 |
| Idq(mA) | 150 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.
This product appears in the following application block diagrams: