QPD3601

    3.4 - 3.6 GHz, 180 Watt, 50 V GaN RF Power Transistor

    Key Features

    • Frequency range: 3.4-3.6GHz, Band 42
    • Drain voltage: 50V
    • Output power (P3dB): 180W
    • Maximum drain efficiency: 66%
    • NI-400 ceramic package

    Qorvo's QPD3601 is a discrete GaN on SiC HEMT which operates from 3.4-3.6 GHz. The device is a single stage matched power amplifier transistor.

    The QPD3601 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

    QPD3601 can deliver PSAT of 180 W at 50 V operation.

    Lead-free and ROHS compliant.

    Typical Applications

      • Active Antennas
      • Band 42
      • Macro Cell Base Station
      • Wireless Communications
    Frequency Min(MHz) 3,400
    Frequency Max(MHz) 3,600
    Gain(dB) 22
    Psat(dBm) 52.6
    PAE(%) 66
    VD(V) 50
    Idq(mA) 420
    Package Type NI-400
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001.B.3.A.4

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Network Infrastructure > Wireless Infrastructure > Cellular Infrastructure Base Station

      Cellular Infrastructure Base Station