T1G4020036-FL

    DC - 3.5 GHz, 2x200 Watt, 50 V GaN RF Power Transistor

    Key Features

    • Frequency: DC - 3.5 GHz
    • Output power (P3dB)1: 200W
    • Linear gain1: 18.1dB
    • Typical PAE3dB1: 67.6%
    • Operating voltage: 50 V
    • CW and Pulse capable

    Note: 1: @2.8 GHz Load Pull (Half of device)

    Qorvo's T1G4020036-FL is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

    Lead-free and ROHS compliant

    Evaluation boards are available upon request.

    Typical Applications

      • Civilian Radar
      • Jammers
      • Military Radar
      • Professional and Military Radio
      • Test Instrumentation
      • Wideband and Narrowband Amplifiers
    Frequency Min(MHz) DC
    Frequency Max(MHz) 3,500
    Gain(dB) 18.1
    Psat(dBm) 2 x 53.0
    Drain Efficiency(%) 67.6
    VD(V) 50
    Idq(mA) 520
    Package Type NI-650
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001.B.3.A.3

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Defense & Aerospace > Radar > S Band Radar

      S Band Radar

    • Applications > Defense & Aerospace > Radar > C Band Radar

      C Band Radar

    • Applications > Defense & Aerospace > Radar > L Band Radar

      L Band Radar

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT