Qorvo's TGA2573-2-TS is a wideband, high power GaN HEMT amplifier fabricated on Qorvo's production 0.25-um GaN on SiC process. Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 20% PAE, and 10 dB small signal gain at a drain bias of 30 V.
The TGA2573-2-TS is a 4-mil thick GaN die mounted on a 15 mil thick CuMoCu carrier. This provides the customer a known good die attach to assist in thermal management and provide easier handling.
Fully matched to 50 ohm and with integrated DC blocking caps on both RF ports, the TGA2573-2-TS is ideally suited to support both commercial and defense related applications.
The TGA2573-2-TS is 100% DC and RF tested onwafer to ensure compliance to performance specifications.
Lead-free and RoHS compliant.
|Package(mm)||5.66 x 2.67 x 0.5|
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