TGA2575-TS

    32 - 38 GHz, 3 Watt, Ka Band Power Amplifier On Carrier

    Key Features

    • Frequency range: 32.0 to 38.0 GHz
    • Power: 35.5 dBm Psat
    • PAE: 22%
    • Gain: 19 dB
    • Return loss: 12 dB
    • Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V typical
    • Dimensions: 5.31 x 8.92 x .49 mm

    Qorvo's TGA2575-TS is a wideband power amplifier fabricated on Qorvo's production-released 0.15 um power pHEMT process. Operating from 32 to 38 GHz, it achieves 35.5 dBm saturated output power, 22% PAE and 19 dB small signal gain over most of the band.

    The TGA2575-TS is a 2 mil thick, GaAs die mounted on a 10 mil thick CuMoCu carrier. This provides the customer a known good die attach to assist in thermal management and provide easier handling.

    Fully matched to 50 ohms, ROHS compliant and with integrated DC blocking caps on both I/O ports, the TGA2575-TS is ideally suited to support both commercial and defense related opportunities.

    The TGA2575-TS is 100% DC and RF tested on-wafer to ensure compliance to performance specifications

    Lead-free and RoHS compliant.

    Typical Applications

      • Communication Systems
      • Military Radar
      • EW Signal Jammers
      • Repeaters / Boosters / DAS
    Frequency Min(GHz) 32
    Frequency Max(GHz) 38
    Pout(W) > 3
    Gain(dB) 19
    PAE(%) 22
    Voltage(V) 6
    Current(mA) 2,100
    Package Type Die on CuMoCu
    Package(mm) 5.31 x 8.92 x 0.49
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001.B.2.D

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Wireless Infrastructure > Repeaters / Boosters / DAS

      Repeaters / Boosters / DAS