TGF2021-01

    DC - 12 GHz X Band 1 mm Discrete Power pHEMT Die

    Last Time Buy >

    End of Life announced May 5, 2017 (PCN 17-0070).
    Last Time Buy Nov 18, 2017.
    Contact your local sales representative for assistance.

    Key Features

    • Frequency range: DC to 12 GHz
    • > 30 dBm nominal Psat
    • 59% maximum PAE
    • 11 dB nominal power gain
    • Suitable for high reliability applications
    • 1 mm x 0.35 um Power pHEMT
    • Nominal bias Vd = 8 to 12 V, Idq = 75 to 125 mA (under RF drive, Id rises from 75 mA to 240 mA)
    • Chip dimensions: 0.57 x 0.53 x 0.10 mm (0.022 x 0.021 x 0.004 in)

    Qorvo's TGF2021-01 is a discrete 1 mm pHEMT which operates from DC to 12 GHz. The part is designed using Qorvo's proven standard 0.35um power pHEMT production process.

    The TGF2021-01 typically provides greater than 30 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-01 appropriate for high efficiency applications. The TGF2021-01 is also ideally suited for point-to-point radio, high-reliability space and military applications.

    The part is lead-free and RoHS compliant and has a protective surface passivation layer providing environmental robustness.

    Typical Applications

      • Base Stations
      • Broadband Wireless
      • High Reliability Space
      • Military
      • Point-to-Point Radio
    Frequency Min(MHz) DC
    Frequency Max(MHz) 12,000
    Gain(dB) 11
    Psat(dBm) > 30
    PAE(%) 59
    VD(V) 8 to 12
    Idq(mA) 75 to 125
    Package Type Die
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

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