TGF2023-2-02
DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT
Key Features
- Frequency range: DC to 18 GHz
- 40.1 dBm nominal Psat at 3 GHz
- 73.3% maximum PAE
- 21 dB nominal power gain
- Bias: VD = 12 to 32 V, IDQ= 50 - 250 mA
- Chip dimensions: 0.82 x 0.92 x 0.10 mm
Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3% which makes the TGF2023-2-02 appropriate for high efficiency applications.
The part is lead-free and RoHS compliant.
Typical Applications
- Broadband Wireless
- Military
- Space
Product Categories
Application Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 18,000 |
| Gain(dB) | 21 |
| Psat(dBm) | 40.1 |
| PAE(%) | 73.3 |
| Vd(V) | 12 to 32 |
| Idq(mA) | 50 to 250 |
| Package Type | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.