TGF2023-2-20

    DC - 18 GHz, 100 Watt Discrete Power GaN on SiC HEMT

    Key Features

    • Frequency range: DC to 18 GHz
    • 50.5 dBm nominal Psat at 3 GHz
    • 70.5% maximum PAE
    • 19.2 dB nominal power gain
    • Bias: Vd = 12 to 32 V, Idq = 400 - 2000 mA
    • Chip dimensions: 0.82 x 4.56 x 0.10 mm

    Qorvo's TGF2023-2-20 is a discrete 20 mm GaN on SiCHEMT which operates from DC to 18 GHz.

    The TGF2023-2-20 typically provides 50.5 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 70.5% which makes the TGF2023-2-20 appropriate for high efficiency applications.

    The product is lead-free and RoHS compliant.

    Typical Applications

      • Broadband Wireless
      • Military
      • Space
    Frequency Min(MHz) DC
    Frequency Max(MHz) 18,000
    Gain(dB) 19.2
    Psat(dBm) 50.5
    PAE(%) 70.5
    VD(V) 12 to 32
    Idq(mA) 400 to 2,000
    Package Type Die
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001.B.3.B.4

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT