TGF2160
DC - 20 GHz 1600 um Discrete GaAs pHEMT
End of Life announced May 5, 2020 (PCN 20-0054).
Last Time Buy: November 14, 2021
Contact your local sales representative for assistance.
Key Features
- Frequency range: DC - 20 GHz
- 32.5 dBm typical output power - P1dB
- 10.4 dB typical gain @ 12 GHz
- 63% PAE typical @ 12 GHz
- No vias
- Technology: 0.25 um GaAs pHEMT
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Qorvo's TGF2160 is a discrete 1600-Micron pHEMT which operates from DC to 20 GHz. The TGF2160 is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2160 typically provides 32.5 dBm of output power at P1dB with gain of 10.4 dB and 63% power-added efficiency at 1 dB compression. This performance makes the TGF2160 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Lead-free and RoHS compliant.
Typical Applications
- Aerospace
- Broadband Wireless
- Commercial
- Defense
- High Reliability
- Test and Measurement
Product Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 20,000 |
| Gain(dB) | 10.4 |
| OP1dB(dBm) | 32.5 |
| PAE(%) | 63 |
| Vd(V) | 8 |
| Idq(mA) | 258 |
| Package Type | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
This product appears in the following application block diagrams: