TGF2936

    DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor

    Key Features

    • Frequency Range: DC - 25 GHz
    • Output Power (P3dB): 10 W at 10 GHz
    • Linear Gain: 16 dB typical at 10 GHz
    • Typical PAE3dB: 58% at 10 GHz
    • Typical NF at 10 GHz: 1.3 dB
    • Operating voltage: 28V
    • CW and Pulse capable
    • 0.98 x 0.55 x 0.10 die

    The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations.

    Lead-free and ROHS compliant.

    Typical Applications

      • Defense and Aerospace
      • Broadband Wireless
    Frequency Min(MHz) DC
    Frequency Max(MHz) 2,500
    Gain(dB) 16
    Psat(dBm) 40
    PAE(%) 58
    VD(V) 28
    Idq(mA) 80
    Package Type die
    Package(mm) 0.98 x 0.55 x 0.10
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001b.3.b