TGF2952

    DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT

    Key Features

    • Frequency range: DC - 14 GHz
    • 38.4dBm nominal Psat at 3 GHz
    • 75.7% maximum PAE at 3 GHz
    • 20.4dB nominal power gain at 3GHz
    • Bias: Vd = 32V, Idq = 25mA
    • Technology: 0.25 um power GaN on SiC
    • Chip dimensions: 0.82 x 1.01 x 0.10 mm

    Qorvo's TGF2952 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-14 GHz.

    The TGF2952 typically provides 38.4 dBm of saturated output power with power gain of 20.4 dB at 3 GHz. The maximum power added efficiency is 75.7 % which makes the TGF2952 appropriate for high efficiency applications.

    Lead-free and RoHS compliant.

    Typical Applications

      • Broadband
      • High Efficiency Power Amplifiers
      • Marine Radar
      • Military Communications
      • Point-to-point Communications
      • Satellite Communications (Satcom)
    Frequency Min(MHz) DC
    Frequency Max(MHz) 14,000
    Gain(dB) 20.4
    Psat(dBm) 38.4
    PAE(%) 75.7
    VD(V) 32
    Idq(mA) 25
    Package Type Die
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Defense & Aerospace > Radar > S Band Radar

      S Band Radar

    • Applications > Defense & Aerospace > Radar > C Band Radar

      C Band Radar

    • Applications > Defense & Aerospace > Radar > X Band Radar

      X Band Radar

    • Applications > Defense & Aerospace > Radar > Ku Band Radar

      Ku Band Radar

    • Applications > Defense & Aerospace > Radar > L Band Radar

      L Band Radar

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT