TGF2955

    DC - 12 GHz, 40 Watt Discrete Power GaN on SiC HEMT

    Key Features

    • Frequency range: DC - 12 GHz
    • 46.4dBm nominal Psat at 3 GHz
    • 69% maximum PAE at 3 GHz
    • 19.2dB nominal power gain at 3 GHz
    • Bias: Vd = 32V, Idq = 150mA
    • Chip dimensions: 0.82 x 2.31 x 0.10 mm

    Qorvo's TGF2955 is a discrete 7.56 mm GaN on SiC HEMT which operates from DC-12 GHz.

    The TGF2955 typically provides 46.4 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 69.0 % which makes the TGF2955 appropriate for high efficiency applications.

    Lead-free and RoHS compliant.

    Typical Applications

      • Broadband Amplifiers
      • High Efficiency Power Amplifiers
      • Marine Radar
      • Military Communications
      • Point-to-point Communications
      • Satellite Communications (Satcom)
    Frequency Min(MHz) DC
    Frequency Max(MHz) 12,000
    Gain(dB) 19.2
    Psat(dBm) 46.4
    PAE(%) 69
    VD(V) 32
    Idq(mA) 150
    Package Type Die
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001.B.3.B.2

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Defense & Aerospace > Radar > S Band Radar

      S Band Radar

    • Applications > Defense & Aerospace > Radar > C Band Radar

      C Band Radar

    • Applications > Defense & Aerospace > Radar > X Band Radar

      X Band Radar

    • Applications > Defense & Aerospace > Radar > L Band Radar

      L Band Radar

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT