TGF2965-SM

    0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor

    Key Features

    • Frequency range: 0.03 - 3 GHz
    • Output power (P3dB): 6.0W at 2 GHz
    • Linear gain: 18 dB typical at 2 GHz
    • Typical PAE3dB: 63% at 2 GHz
    • Operating voltage: 32V
    • Low thermal resistance package
    • CW and pulse capable
    • 3 x 3 mm package

    Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

    The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.

    Lead-free and ROHS compliant.

    Evaluation boards are available upon request.

    Typical Applications

      • Civilian Radar
      • Jammers
      • Land Mobile Radio Communications
      • Military Communications
      • Military Radar
      • Test Instrumentation
      • Wideband and Narrowband Amplifiers
    Frequency Min(MHz) 30
    Frequency Max(MHz) 3,000
    Gain(dB) 18
    Psat(dBm) 37.8
    PAE(%) 63
    VD(V) 32
    Idq(mA) 25
    Package Type QFN
    Package(mm) 3 x 3
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Defense & Aerospace > Radar > S Band Radar

      S Band Radar

    • Applications > Defense & Aerospace > Radar > L Band Radar

      L Band Radar

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT