TGF2977-SM

    DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor

    Key Features

    • Frequency range: DC - 12 GHz
    • Output power (P3dB): 6.0 W at 9.4 GHz
    • Linear gain: 13 dB typical at 9.4 GHz
    • Typical PAE3dB: 50% at 9.4 GHz
    • Operating voltage: 32V
    • Low thermal resistance package
    • CW and pulse capable
    • 3 x 3 mm package

    Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

    Lead-free and ROHS compliant

    Evaluation boards are available upon request.

    Typical Applications

      • Civilian Radar
      • Military Radar
      • Land Mobile Radio Communications
      • Avionics
      • Test Instrumentation
    Frequency Min(MHz) DC
    Frequency Max(MHz) 12,000
    Gain(dB) 13
    Psat(dBm) 37.8
    PAE(%) 50
    VD(V) 32
    Idq(mA) 25
    Package Type QFN
    Package(mm) 3 x 3
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Defense & Aerospace > Radar > S Band Radar

      S Band Radar

    • Applications > Defense & Aerospace > Radar > C Band Radar

      C Band Radar

    • Applications > Defense & Aerospace > Radar > X Band Radar

      X Band Radar

    • Applications > Defense & Aerospace > Radar > L Band Radar

      L Band Radar

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT