TQP0102

    DC - 4 GHz, 5 Watt GaN Power Transistor

    Key Features

    • Frequency: DC to 4 GHz
    • Output Power (P3dB): 37 dBm
    • Linear Gain: > 19 dB
    • Operating Voltage: 32 V
    • Drain Efficiency: 68% at P3dB
    • Package Dimensions: 3 x 3 mm QFN

    Qorvo's TQP0102 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor.

    The TQP0102 can be used in a Doherty architecture for the final stage of a base station power amplifier for small cell, microcell and active antenna systems. The TQP0102 can also be used as a driver in a macrocell base station power amplifier.

    The wide bandwidth of the TQP0102 makes it suitable for many different applications from DC to 4 GHz. The TQP0102 can deliver PSAT of 5 Watts at 28 to 32 V operation.

    Typical Applications

      • Cellular Infrastructure
      • General Purpose RF Power
      • Radar
      • Jammers
      • Test Instrumentation
      • Wideband Communications
      • Narrowband Communications
    Frequency Min(MHz) DC
    Frequency Max(MHz) 4,000
    Gain(dB) > 19
    Psat(dBm) 37
    PAE(%) 64
    VD(V) 32
    Idq(mA) 25
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Defense & Aerospace > Radar > S Band Radar

      S Band Radar

    • Applications > Defense & Aerospace > Radar > L Band Radar

      L Band Radar

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Network Infrastructure > Wireless Infrastructure > Cellular Infrastructure Base Station

      Cellular Infrastructure Base Station