Qorvo's TQP770001 Bluetooth® power amplifier (PA) is designed on Qorvo's advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness. The power amplifier is a two-stage design requiring several SMD tuning elements for input and output matching, gain shaping and bias injection. Features include an integrated bias controller with a power control (variable gain) function. The bias controller also acts to provide temperature compensation. The power amplifier is housed in a 2.0 x 2.0 mm 12-pin STSLP package with a grounded back paddle.
This power amplifier is designed to operate in Bluetooth® v2.0 class 1 systems. It is also intended to be Enhanced Data Rate (EDR) compliant with Bluetooth® v2.0 + EDR specification for both 2 Mbps and 3 Mbps modulation modes.
|Package(mm)||2.0 x 2.0 x 0.57|