TQP770001

    Bluetooth® EDR v2.0 Class 1 Power Amplifier MMIC

    Key Features

    • InGaP HBT technology
    • Bluetooth® v2.0 class 1 systems
    • High efficiency: 50% @ 21.5dBm
    • EDR (Enhanced Data Rate) compliant
    • Under EDR modulation, its low AM-AM and AM-PM distortion guarantee high modulation accuracy
    • Will operate under Bluetooth® FSK, 8DPSK, and Pi/4-DQPSK modulations
    • Optimized for 50 Ohm system
    • Integrated bias controller with a power control (variable gain) function
    • Small 12-pin QFN, 2 x 2 mm module
    • Lead-free 260°C RoHS compliant
    • Full ESD protection

    Qorvo's TQP770001 Bluetooth® power amplifier (PA) is designed on Qorvo's advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness. The power amplifier is a two-stage design requiring several SMD tuning elements for input and output matching, gain shaping and bias injection. Features include an integrated bias controller with a power control (variable gain) function. The bias controller also acts to provide temperature compensation. The power amplifier is housed in a 2.0 x 2.0 mm 12-pin STSLP package with a grounded back paddle.

    This power amplifier is designed to operate in Bluetooth® v2.0 class 1 systems. It is also intended to be Enhanced Data Rate (EDR) compliant with Bluetooth® v2.0 + EDR specification for both 2 Mbps and 3 Mbps modulation modes.

    Typical Applications

      • Bluetooth®
    Package(mm) 2.0 x 2.0 x 0.57
    RoHS No
    Lead Free No
    Halogen Free No
    ITAR Restricted No
    ECCN 5A991.B