The Design Of A 125 W L-Band GaN Power Amplifier

Commercially available GaN discrete transistors have steadily grown in their frequency range and performance abilities. Manufacturers must now make their parts available with high RF performance in terms of available gain, RF output power, and efficiency. This application note describes the design and evaluation of a single stage 125 W L-band GaN power amplifier utilizing a low-cost packaging transistor. Download the full paper for in-depth information on its design aspects, stability factors, measured performance levels, and more.