Data sheet available upon request.
End of Life announced August 3, 2023 (PCN 23-0105).
Last Time Buy: February 17, 2024
Recommended replacement for new designs: QPB3810
Contact your local sales representative for assistance.
The QPD0009 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 3.4 to 3.6 GHz. The device is a single-stage power amplifier transistor for
Doherty application. QPD0009 can deliver PAVG of 7.6 W at +48 V operation.
Lead-free and RoHS compliant.
Frequency Min(MHz) | 3,400 |
Frequency Max(MHz) | 3,600 |
Gain(dB) | 15 |
Psat(dBm) | 47 |
Drain Efficiency(%) | 54 |
Vd(V) | 48 |
Idq(mA) | 32.5 |
Package Type | DFN |
Package(mm) | 7.0 x 6.5 |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | 5A991G |