Qorvo's UF4SC120030K4S is a 1200 V, 30 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
AEC-Q101 qualification in process. Please contact Sales for more information.
|RDS(on) Typ @ 25C(mohm)||30|
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