QPD1823
1.8 - 2.4 GHz, 220 Watt, 48 V GaN RF Power Transistor
End of Life announced March 2, 2021 (PCN 21-0056).
Last Time Buy: September 13, 2021
Contact your local sales representative for assistance.
Key Features
- Frequency range: 1.8-2.4 GHz
- Drain voltage: 48V
- Output power (P3dB): 227W
- Maximum drain efficiency: 77.5%
- Efficiency-tuned P3dB gain: 21.7dB
- NI-400 package
Qorvo's QPD1823 is a discrete GaN on SiC HEMT which operates from 1.8-2.4 GHz. The device is a single stage matched power amplifier transistor.
The QPD1823 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD1823 can deliver PSAT of 227 W at 48 V operation.
Lead-free and ROHS compliant.
Typical Applications
- Active Antennas
- Micro Cell Base Station
- Macro Cell Base Station
- Wireless Communications
Product Categories
| Frequency Min(MHz) | 1,800 |
| Frequency Max(MHz) | 2,400 |
| Gain(dB) | 24 |
| Psat(dBm) | 53.6 |
| PAE(%) | 80 |
| Vd(V) | 48 |
| Idq(mA) | 360 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.
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