DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor

    Key Features

    • Frequency Range: DC - 25 GHz
    • Output Power (P3dB): 7.2 W at 10 GHz
    • Linear Gain: 15 dB typical at 10 GHz
    • Typical PAE3dB: 57% at 10 GHz
    • Typical NF at 10 GHz: 1.3 dB
    • Operating voltage: 28V
    • CW and Pulse capable
    • 0.83 x 0.55 x 0.10 die

    The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations.

    Lead-free and ROHS compliant.

    Typical Applications

      • Defense and Aerospace
      • Broadband wireless
    Frequency Min(MHz) DC
    Frequency Max(MHz) 25,000
    Gain(dB) 15
    Psat(dBm) 38.6
    PAE(%) 57
    Vd(V) 28
    Idq(mA) 80
    Package Type die
    Package(mm) 0.83 x 0.55 x 0.10
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

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    Modelithics® Qorvo GaN Library Brochure