TGF2935
DC - 25 GHz, 5 Watt, 28 V GaN RF Transistor
End of Life announced March 24, 2021 (PCN 21-0070).
Last Time Buy: October 4, 2021
Recommended replacement for new designs: TGF2933
Contact your local sales representative for assistance.
Key Features
- Frequency Range: DC - 25 GHz
- Output Power (P3dB): 4.8 W at 10 GHz
- Linear Gain: 16 dB typical at 10 GHz
- Typical PAE3dB: 60% at 10 GHz
- Typical NF at 10 GHz: 1.3 dB
- Operating voltage: 28V
- CW and Pulse capable
- 0.60 x 0.55 x 0.10 die
The Qorvo TGF2935 is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations.
Lead-free and ROHS compliant.
Typical Applications
- Defense and Aerospace
- Broadband Wireless
Product Categories
Application Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 25,000 |
| Gain(dB) | 16 |
| Psat(dBm) | 36.8 |
| PAE(%) | 60 |
| Vd(V) | 28 |
| Idq(mA) | 40 |
| Package Type | die |
| Package(mm) | 0.60 x 0.55 x 0.10 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.