Announcing the latest additions to Qorvo's innovative RF portfolio of Wi-Fi 6E front end modules, switches, and discrete GaAs pHEMTs which serve a wide range of wireless, automotive telematics, NAD, LTE, 5G communications, defense radar, satellite and communications systems. These high-performance solutions simplify RF for designers worldwide and are available at Qorvo's authorized channel partners.
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6GHz Wi-Fi 6E Medium Power Front End Module |
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QPF4632 Features
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POUT: +16dBm MCS11 HE160 -43dB dynamic EVM
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POUT: +24dBm MCS0 HE20 spectral mask compliance
- Noise figure: 2dB
Additional information:
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- 14dB Rx gain & 8dB bypass loss
- Works with QPF4532 & QPF4211 to create a total tri-band solution
- 2.5x2.5mm package
- Ideal for wireless access points
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SP4T Switch for LTE Applications |
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QPC8013Q Features
- Frequency range: 617-6000MHz
- Low insertion loss: 0.33 at 960MHz
- Broadband performance designed for LTE, 5G NR and V2X
- AEC-Q 100 Grade 3 qualified
Additional information:
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- No DC blocking capacitors required in typical applications
- 1.1 x 1.9mm package
- Ideal for automotive telematics, NAD, 5G & LTE applications
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SP5T & SP6T Switches for LTE Applications |
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QPC8014Q & QPC8018Q Features
- Frequency range: 617-6000MHz
- Low insertion loss: 0.33 at 960MHz
- Broadband performance designed for LTE, 5G NR and V2X
- AEC-Q 100 Grade 3 qualified
Additional information:
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- 34.5dBm power handling capable
- No DC blocking capacitors required in typical applications
- 1.1 x 1.9mm package
- Ideal for automotive telematics, NAD, 5G & LTE applications
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DC-20GHz, 180 um Discrete GaAs pHEMT Die |
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QPD2018D Features
- 0.16W P1dB, 12GHz
- 55% PAE at P1dB, 12GHz
- Gain: 14dB at 12GHz
- Noise figure: 1dB at 12GHz
Additional information:
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- Bias voltage: 8V
- 0.41 x 0.34 x 0.10mm die
- Ideal for radar, communications & broadband wireless
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DC-20GHz, 250 um Discrete GaAs pHEMT Die |
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QPD2025D Features
- 0.25W P1dB, 12GHz
- 58% PAE at P1dB, 12GHz
- Gain: 14dB at 12GHz
- Noise figure: 0.9dB at 12GHz
Additional information:
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- Bias voltage: 8V
- 0.41 x 0.34 x 0.10mm die
- Ideal for radar, communications & broadband wireless
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DC-20GHz, 400 um Discrete GaAs pHEMT Die |
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QPD2040D Features
- 0.40W P1dB, 12GHz
- 55% PAE at P1dB, 12GHz
- Gain: 13dB at 12GHz
- Noise figure: 1.1dB at 12GHz
Additional information:
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- Bias voltage: 8V
- 0.41 x 0.34 x 0.10mm die
- Ideal for radar, communications & broadband wireless
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Multi-Standard IoT Communications? ConcurrentConnect Can Help |
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The complex mix of IoT devices and communication protocols in a smart home network creates a difficult challenge. How can you keep network activities coordinated between many standards while minimizing latency?
Watch this demo that shows a unique approach to ensuring reliable, unified network communications. Read the Blog.
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Qorvo will showcase RF and power solutions for 5G, defense, aerospace and more in Denver, CO at IMS June 21-23. Be sure to connect with Qorvo experts to learn more about the company's products and solutions.
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New Gen 4 SiC FETs: Technical Product Overview |
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Learn how the 1200V Gen 4 SiC FETs with RDS(on) options from 23-70 milliOhms and the industry's best figures of merit are ideally suited for 800V bus architectures.
Figure of merit comparisons are critical for power designers to identify the best technology for their design, by comparing performance widely across a variety of topologies, power levels, etc. Check out the high-performance Gen 4 series. Read the Overview.
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Visit us at Embedded World 2022 |
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Visit Qorvo at Embedded World 2022 on June 21-23,2022 in Nuremberg, Germany. We'll be sharing our latest IoT innovations. Make an appointment or keep an eye out for upcoming announcements.
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ESD Specifications for Smartphone Antenna Tuners |
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Does your mobile device have enough electrostatic device protection? Tuner selection should reflect the reality of today's manufacturing systems, not legacy assumptions. Learn what you really need.
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Copyright © 2022 Qorvo. All Rights Reserved. |
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