Greensboro, NC, January 24, 2024 – Qorvo^® (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, today unveiled an automotive-qualified silicon carbide (SiC) field effect transistor (FET) offering an industry-best 9mΩ R_DS(on) in a compact D2PAK-7L package. This 750V SiC FET is the first in a new family of pin-compatible SiC FETs from Qorvo with R_DS(on) options up to 60mΩ, making them well suited for electric vehicle (EV) applications, including on-board chargers, DC/DC converters and positive temperature coefficient (PTC) heater modules.

The UJ4SC075009B7S features a 9mΩ typical R_DS(on) at 25°C needed for reducing conduction losses and maximizing efficiency in high voltage, multi-kilowatt automotive applications. Its small, surface-mount package enables automated assembly flows and reduces customer manufacturing costs. This new 750V family complements Qorvo’s existing 1200V and 1700V automotive SiC FETs in D2PAK packaging to form a complete portfolio addressing EV applications that span 400V and 800V battery architectures.

Ramanan Natarajan, director of Product Line Marketing for Qorvo’s Power Products, said, “The launch of this new family of SiC FETs demonstrates our commitment to providing EV powertrain designers the most advanced and efficient solutions for their unique automotive power challenges.”

These fourth generation SiC FETs leverage Qorvo’s unique cascode circuit configuration, in which a SiC JFET is co-packaged with a Si MOSFET to produce a device with the efficiency advantages of wide bandgap switch technology and the simpler gate drive of silicon MOSFETs. Efficiency in SiC FETs is dependent on conduction losses, and Qorvo’s cascode/JFET approach enables reduced conduction losses through industry-best R_DS(on) and body diode reverse voltage drop.

The key features of the UJ4SC075009B7S include:

• Threshold voltage V_G(th): 4.5V (typical) allowing 0 to 15V drive
• Low body diode V_FSD: 1.1V
• Maximum operating temperature: 175°C
• Excellent reverse recovery: Q_rr = 338 nC
• Low gate charge: Q_G = 75 nC
• Automotive Electronics Council (AEC) Q101-qualified

For more information about Qorvo’s advanced SiC solutions for power applications, please visit www.qorvo.com/go/gen4.

About Qorvo
Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers’ most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including consumer electronics, smart home/IoT, automotive, EVs, battery-powered appliances, network infrastructure and aerospace/defense. Visit www.qorvo.com to learn how our diverse and innovative team is helping connect, protect and power our planet.

Qorvo is a leading global provider of innovative semiconductor solutions that connect, protect and power our planet.

Media Contact: Adam Castaldo Strategic MarCom Manager Power Products Adam.Cataldo@qorvo.com

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