GREENSBORO, NC – September 22, 2026 – Qorvo® (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, today announced it has achieved more than a  400%[CL1.1] increase in the RF power density at  X-band on Gallium Nitride (GaN) transistor  through a research and development work funded by the Defense Advanced Research Projects Agency (DARPA) Thermal Reduction for Electronics through Advanced Devices and Heterogeneous Semiconductors (THREADS) program. This accomplishment demonstrates the potential to deliver substantially higher RF power for next-generation radar, electronic warfare (EW) and communications systems.

As transistor output power increases, excess heat in the channel can reduce RF performance, shorten device lifetime and constrain the range and effectiveness of RF systems. Under the THREADS initiative for a paradigm shift, Qorvo is developing and integrating new materials, device architectures and processes to reduce the total thermal resistance within the device for transistor-level thermal management while substantially boosting RF performance.

"This achievement reflects the depth of Qorvo's expertise in GaN device design and thermal management," said Gangadhar Burra, senior director and chief architect in Qorvo's HPA business. "By addressing heat at the transistor level, we are opening a path to substantially higher RF output power without increasing system size or weight. That could enable longer-range radar, more effective electronic warfare and stronger communications with the reliability required for demanding defense applications."

Qorvo achieved this technology milestone at the end of THREADS Phase I, and has been awarded follow-on work in Phase 2 of the program.

Qorvo was selected in 2023 to participate in the four-year THREADS program. Through the  THREADS program, Qorvo is helping advance the state of the art in high power RF technology.  Its work builds on decades of innovation in GaN technology and experience delivering RF solutions for radar, EW and communications applications. Qorvo continues to advance GaN device and process technologies that help customers increase RF performance while addressing demanding size, weight, power and reliability requirements.

About Qorvo

Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers’ most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including automotive, consumer, defense & aerospace, industrial & enterprise, infrastructure and mobile. Visit www.qorvo.com to learn how our diverse and innovative team is helping connect, protect and power our planet.

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These and other risks and uncertainties, which are described in more detail under “Risk Factors” in Part I, Item 1A of our Annual Report on Form 10-K for the fiscal year ended March 29, 2025, and Qorvo’s subsequent reports and statements that we file with the SEC, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.