GREENSBORO, NC and HILLSBORO, OR – May 20, 2016 – Qorvo® (Nasdaq: QRVO), a leading provider of core technologies and RF solutions for mobile, infrastructure and defense applications, announced today that its 15W GaN on SiC wideband input-matched transistor has completed stringent environmental testing, demonstrating its reliability for use in defense and emergency response communications equipment.

    Roger Hall, general manager of Qorvo's Defense & Aerospace Products business unit, said, "Qorvo has experience applying GaN technology to handheld communications equipment, like wideband handheld radios for first responders, with products that must operate reliably in challenging environmental conditions. Qorvo's QPD1000 recently passed JEDEC's JESD22- A110D Highly Accelerated Temperature/Humidity Stress Test (HAST), proving its reliability in harsh environmental conditions, including severe temperature, humidity and bias."

    HAST measures a device at 130 degrees Celsius, 85 percent relative humidity and high atmospheric pressure for a minimum of 96 hours. Additional testing is ongoing, demonstrating the QDP1000's ability to exceed the industry standard test.

    The QPD1000 wideband input-matched GaN transistor is offered in a low-cost, space-saving surface-mount plastic DFN package and operates at 30-1215 MHz. With an integrated wideband input-matching network, the QPD1000 enables wideband gain and power performance along with high efficiency. The output can be matched on the board to optimize power and efficiency for any region within the band. Qorvo’s QDP1000 can be used in continuous wave and pulsed signals for defense and public safety communications applications.

    Qorvo is the leading GaN RF supplier for the defense and cable industries*. Since 1999, Qorvo has been driving GaN research and innovation, offering proven GaN circuit reliability and compact, highly efficient products. Qorvo is a Defense Manufacturing Electronics Agency accredited 1A Trusted Source, having completed the Defense Production Act Title III GaN on SiC program in 2014. The Company remains the only GaN supplier to have achieved Manufacturing Readiness Level (MRL) 9. Qorvo drives the innovation of GaN products for next-generation systems – from DC through Ka-band – that successfully transition from the factory to the field with robust performance, low maintenance and long operational lifetimes.

    Qorvo's GaN products will be showcased at Booth 839 at the IEEE International Microwave Symposium (IMS), May 22-27 in San Francisco, Calif. Visit us at IMS or join the conversation online using the hashtags #IMS2016 and #QorvoIMS.

    *Strategy Analytics, 2016

    About Qorvo

    Qorvo (NASDAQ:QRVO) is a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications. Qorvo was formed following the merger of RFMD and TriQuint, and has more than 7,000 global employees dedicated to delivering solutions for everything that connects the world. Qorvo has the industry's broadest portfolio of products and core technologies; world-class ISO9001-, ISO 14001- and ISO/TS 16949-certified manufacturing facilities; and is a DoD-accredited 'Trusted Source' (Category 1A) for GaAs, GaN and BAW products and services. For the industry's leading core RF solutions, visit

    Qorvo is a registered trademark of Qorvo, Inc. in the U.S. and in other countries.

    Media Contact

    Katie Caballero
    Marketing Communications Manager
    Qorvo Infrastructure and Defense Products

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