Qorvo’s® Newest GaN Power Amplifier Offers Industry-leading Saturated Power for C-Band Applications
Combines two times increase in RF output power with industry-leading efficiency in the same footprint as previous generation GaN PA
GREENSBORO, NC – December 16, 2020 – Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today introduced the industry's highest-power GaN MMIC power amplifier (PA) that delivers up to 100 watts of saturated power in a small, 7 mm x 7 mm QFN package. The PA is internally matched and requires no additional external RF components, enabling designers and system integrators to maximize design by reducing size and weight while offering better performance. The integrated Surface Mount Technology (SMT) package design enables customers to manufacture at a lower cost compared to die or bolt-down flange package alternatives.
The Qorvo QPA2309, built on the company's patented QGaN25HV wafer process, operates between 5-6 GHz (C-band) and delivers an industry-best power added efficiency (PAE) of 52%. This GaN PA provides defense radar customers with two times higher saturated power, higher large signal gain and improved PAE in the same package size as the previous generation product. Qorvo also offers customers the option of a 50-watt version (QPA2310) in the same package configuration.
Dean White, senior director of Qorvo's Defense and Aerospace business said, "The QPA2309 gives defense customers the ability to dramatically increase their power density output in the same design footprint, to increase radar range and sensitivity without adding size or weight."
The QPA2309 and QPA2310 with the following specifications, are available for sampling to qualified customers.
| Specifications | QPA2309 | QPA2310 |
| Frequency Range | 5.0 - 6.0 GHz | 5.0 - 6.0 GHz |
| PSAT | 100 Watts | 50 Watts |
| PAE | 52% | 53% |
| Power Gain | 22 dB | 23 dB |
| Bias | VD = 50V, IDQ = 600 mA | VD = 50V, IDQ = 300 mA |
| Package Dimensions | 7.0 x 7.0 x 0.82 mm | 7.0 x 7.0 x 0.82 mm |
Qorvo offers the industry's largest, most innovative GaN-on-SiC portfolio to help customers realize superior efficiency and operational bandwidth. The company’s GaN-on-SiC products deliver high power density, reduced size, excellent gain, high reliability and process maturity. Qorvo is a leading supplier of RF products and compound semiconductor foundry services to defense primes and other global defense and aerospace customers. Qorvo is the only supplier to achieve a Manufacturing Readiness Level 10 (MRL 10) rating from the U.S. Department of Defense.
About Qorvo
Qorvo (Nasdaq: QRVO) makes a better world possible by providing innovative Radio Frequency (RF) solutions at the center of connectivity. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers' most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including advanced wireless devices, wired and wireless networks and defense radar and communications. We also leverage unique competitive strengths to advance 5G networks, cloud computing, the Internet of Things, and other emerging applications that expand the global framework interconnecting people, places and things. Visit www.qorvo.com to learn how Qorvo connects the world.
Qorvo is a registered trademark of Qorvo, Inc. in the U.S. and in other countries. All other trademarks are the property of their respective owners.
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