FH1-G
0.05 - 4 GHz GaAs MESFET
Please use TQP3M9028 for new designs.
Key Features
- 50 to 4000 MHz
- Low noise figure
- 18 dB gain
- +42 dBm OIP3
- +21 dBm P1dB
- Single or dual supply operation
- Lead-free / green / RoHS compliant
- SOT-89 package
- MTTF > 100 years
Qorvo's FH1-G is a high dynamic range FET packaged in a low cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85 °C. The FH1-G is available in the environmentally-friendly lead-free / green / RoHS-compliant SOT-89 package.
The device utilizes a high reliability GaAs MESFET technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the FH1-G will work for other applications within the 50 to 4000 MHz frequency range such as fixed wireless.
Typical Applications
- CATV / DBS
- Defense / Homeland Security
- Industrial, Scientific and Medical (ISM)
- Mobile Infrastructure