1.2 - 1.4 GHz, 375 Watt, 65 Volt , GaN on SiC RF Transistor

    Last Time Buy >

    End of Life announced October 22, 2023 (PCN 23-0148).
    Last Time Buy: May 3, 2024
    Recommended replacement for new designs: QPD1426, QPD1426L
    Contact your local sales representative for assistance.

    Note:  Any orders for Last Time Buy materials from Qorvo are considered non-cancellable, non-returnable.

    Key Features

    • Operating Frequency Range: 1.2 - 1.4 GHz
    • Saturated Output Power PSAT: 56.3dBm
    • Drain Efficiency at PSAT: 75%
    • Large Signal Gain at PSAT: 17 dB
    • Bias: VDS = +65V, IDQ = 430 mA
    • Package Type: NI-400
    • Package Dimensions: 10.16 x 10.16 x 4.06 mm

    The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency.

    Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.

    Evaluation boards are available upon request.


    Typical Applications

      • L-Band Radar
      • ISMe

    Product Categories

    Application Categories

    Frequency Min(MHz) 1,200
    Frequency Max(MHz) 1,400
    Gain(dB) 17
    Psat(dBm) 56.3
    Drain Efficiency(%) 75
    Vd(V) 65
    Idq(mA) 430
    Package Type NI-400
    Package(mm) 10.16 x 10.16 x 4.06
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99