QPD1426
1.2 - 1.4 GHz, 220 W GaN on SiC RF Transistor
The QPD1426 is a 220 W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 53.5 dBm of saturated output power with 17 dB of large-signal gain and 70% of drain efficiency.
The device's compact size and high efficiency optimize SWaP attributes, resulting in smaller and lighter power amplifiers, along with lower thermal management costs. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.
Evaluation boards are available upon request.
Key Features
- Operating Frequency Range: 1.2 - 1.4 GHz
- Saturated Output Power PSAT: 53.5 dBm
- Drain Efficiency at PSAT: 70%
- Large Signal Gain at PSAT: 17 dB
- Bias: VDS = +50 V, IDQ = 350 mA
- Package Type: NI-400
- Package Dimensions: 10.16 x 10.16 mm
Typical Applications
- L-Band Radar
- Professional and Military Radio Communications
- Test Instrumentation
Parameters
Technical Documents
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