QPD2562L
2.5 - 3.5 GHz, 200 W GaN on SiC RF Transistor
The QPD2562L is a 200 W - 300 W discrete GaN on SiC HEMT which operates from 2.5 to 2.9 GHz and 2.9 to 3.3 GHz providing typically up to 55.4 dBm / 53 dBm respectively, of saturated output power with 13 dB of large-signal gain and 50% / 45% respectively, of drain efficiency.
Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.
Evaluation boards are available upon request.
Key Features
- Operating Frequency Range: 2.5 - 2.9 GHz, 2.9 - 3.3 GHz
- Saturated Output Power PSAT: 54.8 dBm, 53 dBm
- Drain Efficiency at PSAT: 50%, 45%
- Large Signal Gain at PSAT: 13 dB
- Bias: VDS = +50 V, IDQ = 440 mA
- Package Type: NI-650
- Package Dimensions: 29.00 x 5.84 mm
Typical Applications
- S-Band Radar
- ISM
- Communications
- Electronic Warfare
Parameters
Technical Documents
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