RFG1M09180

    700 - 1000 MHz, 180 Watt GaN Power Amplifier

    Key Features

    • Advanced GaN HEMT Technology
    • Typical Peak Modulated Power > 240W
    • Advanced Heat Sink Technology
    • Single Circuit for 865MHz To 960MHz
    • 48V Operation Typical Performance:
    • POUT = 47dBm
    • Gain = 20dB
    • Drain Efficiency = 39%
    • ACP = -32.5dBc
    • Linearizable to - 55dBc with DPD
    • -25 to 85 degrees C Operating Temperature
    • Optimized for Video Bandwidth and Minimized Memory Effects
    • RF Tested for 3GPP Performance
    • RF Tested for Peak Power Using IS95
    • Large Signal Models Available

    Qorvo's RFG1M09180 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 700MHz to 1000MHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density Gallium Nitride (GaN) semiconductor process optimized for high peak-to-average ratio applications, these high performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFG1M09180 is an input-matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.

    Frequency Min(MHz) 865
    Frequency Max(MHz) 960
    Gain(dB) 20
    Psat(dBm) 54
    Drain Efficiency(%) 43
    Vd(V) 48
    Idq(mA) 600
    Package Type RF400-2 with flange
    ECCN EAR99

    This product appears in the following application block diagrams:

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