End of Life announced October 20, 2015 (PCN 15-0109).
Last Time Buy May 2, 2016.
Contact your local sales representative for assistance.
Qorvo's SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT process, featuring one-micron emitters with VCEO >7V. These unconditionally stable amplifiers have less than 1dB gain drift over 125 degrees C operating range (-40 to 85 degrees C) and are ideal for use as buffer amplifiers in oscillator applications covering cellular, ISM, and narrowband PCS bands.
Frequency Min(MHz) | DC |
Frequency Max(MHz) | 4,000 |
Gain(dB) | 15 |
OP1dB(dBm) | -9.5 |
OIP3(dBm) | 1 |
NF(dB) | 2.5 |
Voltage(V) | 3.6 |
Current(mA) | 8 |
Package Type | SOT-363 |
ECCN | 5A991.G |
This product appears in the following application block diagrams: