SGA8543Z
50 - 3500 MHz High IP3, Medium Power Discrete SiGe HBT
Qorvo's SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from 50MHz to 3.5GHz. The SGA8543Z is optimized for 3.3V operation but can be biased at 2.7V for low-voltage battery operated systems. The device provides low NF and excellent linearity at a low cost. It can be operated over a wide range of currents depending on the power and linearity requirements.The matte tin finish on the lead-free "Z" package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants.
Last Time Buy May 2, 2016.
Contact your local sales representative for assistance.
Please use for new designs.
Key Features
- 50MHz to3.5GHz Operation
- 1.5dB NFMN at 2.44GHz
- 15.6dB GMAX at 2.44GHz
- P1dB =+20.6dBm at 2.44GHz
- OIP3 =+34.6dBm at 2.44GHz
- Low Cost, High Performance, Versatility
Parameters
Technical Documents
Design Resources
Need more support?
At Qorvo, our customers are a core part of what we do, and we want every experience you have with us to be as reliable as our products. If you have a question or if something isn't working the way you expect, please let us know.
Forum
Engage with the Qorvo community, ask technical questions and share insights.
Support
Get technical, application or customer support plus updates on supply chain and FAQs.
Sales
Connect with our sales team to gain tailored solutions, expert guidance and access to the latest technologies.
