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SGB2400

SGB2400

DC - 4000 MHz Active Bias SiGe HBT MMIC Amplifier

Qorvo's SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry. The active bias network provides stable current over temperature and process Beta variations. The SGB2400 is designed to operate directly from a 3V supply. The SGB2400 product is designed for high linearity 3V gain block applications that require small size and minimal external components. The die is internally matched to 50W. Qorvo can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification.

Discontinued
i
Product Data Sheet06/19/2012
Buy OnlineRequest a SampleContact Sales
Buy OnlineRequest a SampleContact Sales

Key Features

  • High Reliability SiGe HBT Technology
  • Robust Class 1C ESD
  • P1dB = 6.9dBm at 1950MHz
  • IP3 = 18.0dBm at 1950MHz
  • Die Size: 0.75mm x 0.70mm

Parameters

Frequency Min (GHz)
0
Frequency Max (GHz)
4
Gain (dB)
17.2
Vd (V)
3
Package Type
Bare Die
ECCN
5A991.G

Technical Documents

Filters
1 result found
All (1)
  • Product Data Sheet

    06/19/2012
    Data Sheet
Results per page
10

Need more support?

At Qorvo, our customers are a core part of what we do, and we want every experience you have with us to be as reliable as our products. If you have a question or if something isn't working the way you expect, please let us know.

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© 2026 Qorvo US, Inc

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/
Products
/
Amplifiers
/
Power Amplifiers
/
SGB2400

SGB2400

DC - 4000 MHz Active Bias SiGe HBT MMIC Amplifier

Qorvo's SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry. The active bias network provides stable current over temperature and process Beta variations. The SGB2400 is designed to operate directly from a 3V supply. The SGB2400 product is designed for high linearity 3V gain block applications that require small size and minimal external components. The die is internally matched to 50W. Qorvo can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification.

Discontinued
i
Product Data Sheet06/19/2012
Buy OnlineRequest a SampleContact Sales
Buy OnlineRequest a SampleContact Sales

Key Features

  • High Reliability SiGe HBT Technology
  • Robust Class 1C ESD
  • P1dB = 6.9dBm at 1950MHz
  • IP3 = 18.0dBm at 1950MHz
  • Die Size: 0.75mm x 0.70mm

Parameters

Frequency Min (GHz)
0
Frequency Max (GHz)
4
Gain (dB)
17.2
Vd (V)
3
Package Type
Bare Die
ECCN
5A991.G

Technical Documents

Filters
1 result found
All (1)
  • Product Data Sheet

    06/19/2012
    Data Sheet
Results per page
10

Need more support?

At Qorvo, our customers are a core part of what we do, and we want every experience you have with us to be as reliable as our products. If you have a question or if something isn't working the way you expect, please let us know.

Forum

Forum

Engage with the Qorvo community, ask technical questions and share insights.

Support

Support

Get technical, application or customer support plus updates on supply chain and FAQs.

Sales

Sales

Connect with our sales team to gain tailored solutions, expert guidance and access to the latest technologies.

Stay up to date with us.

Sign up for notification on new products, product/process change notifications (PCNs) and end of life (EOL) alerts.

Sign Up

Qorvo products are at work connecting, protecting and powering the planet. We bring core radio frequency (RF) and power technologies and solutions to automotive, consumer, defense & aerospace, industrial & enterprise, infrastructure and mobile markets.

Stay Connected

  • Facebook
  • X
  • LinkedIn
  • YouTube
  • Products
  • Solutions
  • Design Hub
  • New Products
  • Product Compliance
  • Blog Posts
  • Events & Trade Shows
  • News Releases
  • Success Stories
  • Technical Articles
  • About Us
  • Careers
  • Corporate Videos
  • Quality
  • Locations
  • Investors
  • How to Buy
  • Forums
  • Portals
  • Contact Us
  • Subscription Center
Site MapFeedbackLegalPrivacySupply Chain Transparency

© 2026 Qorvo US, Inc

|

+1-833-641-3810

Qorvo
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  • Design Hub
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