TGF1350-SCC

DC - 18 GHz, 0.3 mm GaAs MESFET Die

Qorvo's TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used for low noise applications DC to 18 GHz.

Its bond pad is gold plated for compatibility with thermocompression and thermosonic compatibility wire bonding processes. The TGF1350-SCC is readily assembled using automated equipment. Die attach should be accomplished with conductive epoxy only. Eutectic attach is not recommended.

Discontinued
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Key Features

  • 0.5 um x 300 um FET
  • 1.5 dB noise figure with 11dB associated gain at 10 GHz
  • 2.5 dB noise figure with 7 dB associated gain at 18 GHz
  • All-gold metallization for high reliability
  • Recessed gate structure
  • Dimensions: 0.620 x 0.514 x 0.102 mm (0.024 x 0.020 x 0.004 in)

Parameters

Frequency Min (MHz)
DC
Frequency Max (MHz)
18,000
Gain (dB)
11
Psat (dBm)
13
NF (dB)
1.5
Vd (V)
3
Idq (mA)
15
Package Type
Die
RoHS
No
Lead Free
No
Halogen Free
No
ITAR Restricted
No

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