TGF2021-01
DC - 12 GHz X Band 1 mm Discrete Power pHEMT Die
End of Life announced May 5, 2017 (PCN 17-0070).
Last Time Buy Nov 18, 2017.
Contact your local sales representative for assistance.
Key Features
- Frequency range: DC to 12 GHz
- > 30 dBm nominal Psat
- 59% maximum PAE
- 11 dB nominal power gain
- Suitable for high reliability applications
- 1 mm x 0.35 um Power pHEMT
- Nominal bias Vd = 8 to 12 V, Idq = 75 to 125 mA (under RF drive, Id rises from 75 mA to 240 mA)
- Chip dimensions: 0.57 x 0.53 x 0.10 mm (0.022 x 0.021 x 0.004 in)
Qorvo's TGF2021-01 is a discrete 1 mm pHEMT which operates from DC to 12 GHz. The part is designed using Qorvo's proven standard 0.35um power pHEMT production process.
The TGF2021-01 typically provides greater than 30 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-01 appropriate for high efficiency applications. The TGF2021-01 is also ideally suited for point-to-point radio, high-reliability space and military applications.
The part is lead-free and RoHS compliant and has a protective surface passivation layer providing environmental robustness.
Typical Applications
- Base Stations
- Broadband Wireless
- High Reliability Space
- Military
- Point-to-Point Radio
Product Categories
Application Categories
- Applications> Customer Premises Equipment
- Applications> Defense & Aerospace> Communications
- Applications> Defense & Aerospace> Electronic Warfare
- Applications> Defense & Aerospace> Radar
- Applications> Defense & Aerospace> Space
- Applications> Network Infrastructure> Point-to-Point Radio
- Applications> Network Infrastructure> Satellite Communications
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 12,000 |
| Gain(dB) | 11 |
| Psat(dBm) | > 30 |
| PAE(%) | 59 |
| Vd(V) | 8 to 12 |
| Idq(mA) | 75 to 125 |
| Package Type | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |