TGF2021-08
DC - 12 GHz X Band 8 mm Discrete Power pHEMT Die
Qorvo's TGF2021-08 is a discrete 8 mm pHEMT which operates from DC to 12 GHz. The part is designed using Qorvo's proven standard 0.35um power pHEMT production process.
The TGF2021-08 typically provides greater than 39 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-08 appropriate for high efficiency applications. The TGF2021-08 is also ideally suited for point-to-point radio, high-reliability space and military applications.
The part is lead-free and RoHS compliant and has a protective surface passivation layer providing environmental robustness.
Last Time Buy Nov 18, 2017.
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Key Features
- Frequency range: DC to 12 GHz
- > 39 dBm nominal Psat
- 59% maximum PAE
- 11 dB nominal power gain
- Suitable for high reliability applications
- 8 mm x 0.35 um Power pHEMT
- Nominal bias Vd = 8 to 12V, Idq = 600 to 1000 mA (under RF drive, Id rises from 600 mA to 1920 mA)
- Chip dimensions: 0.57 x 2.42 x 0.10 mm (0.022 x 0.095 x 0.004 in)
Typical Applications
- Base Stations
- Broadband Wireless
- High Reliability Space
- Military
- Point-to-Point Radio
Parameters
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