TGF2961-SD
DC - 4 GHz, 1 Watt GaAs HFET
Qorvo's TGF2961-SD is a high performance 1 Watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT-89 surface mount package.
The device's ideal operating point is at a drain bias of 8 V and 200 mA. At this bias at 900 MHz when matched into 50 Ohms using external components, this device is capable of 18 dB of gain, 30 dBm of saturated output power and 44 dBm of output IP3
The part is lead-free and RoHS compliant. Evaluation boards at 900 MHz, 1900 MHz and 2100 MHz are available upon request.
Key Features
- Frequency range: DC to 4 GHz
- Nominal 900 MHz application board performance:
- TOI: 44 dBm
- 31 dBm Psat, 30 dBm P1dB
- Gain: 18 dB
- Input return loss: -15 dB
- Output return loss: -7 dB
- Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V (typical)
- Package dimensions: 4.5 x 4 x 1.5 mm
Typical Applications
- Cellular Base Stations
- IF and LO Buffers
- RFID
- WiMAX
- Wireless Infrastructure
Parameters
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