TGF4240-SCC
DC - 12 GHz, 2.4 mm HFET Die
Discontinued >
Last Time Buy April 18, 2014.
Key Features
- Frequency range: DC to 12 GHz
- 2400 um x 0.5 um HFET
- Nominal Pout of 31.5 dBm at 8.5 GHz
- Nominal gain of 10.0 dB at 8.5 GHz
- Nominal PAE of 56 % at 8.5 GHz
- Suitable for high reliability applications
- Dimensions: 0.6 x 1.0 x 0.1 mm (0.024 x 0.040 x 0.004 in)
Qorvo's TGF4240-SCC is a single gate 2.4 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Typical performance at 8.5 GHz is 31.5 dBm power output, 10 dB Gain and 56% PAE.
Bond pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4240-SCC is readily assembled using automatic equipment.
Typical Applications
- Cellular Base Stations
- High Reliability Space
- Military
Application Categories
- Applications> Customer Premises Equipment
- Applications> Defense & Aerospace> Communications
- Applications> Defense & Aerospace> Electronic Warfare
- Applications> Defense & Aerospace> Radar
- Applications> Defense & Aerospace> Space
- Applications> Network Infrastructure> Point-to-Point Radio
- Applications> Network Infrastructure> Satellite Communications
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 12,000 |
| Gain(dB) | 10 |
| Psat(dBm) | 31.5 |
| PAE(%) | 56 |
| Vd(V) | 8 |
| Idq(mA) | 192 |
| Package Type | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |