TGF4250-SCC

DC - 10.5 GHz, 4.8 mm HFET Die

Qorvo's TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power output, 13 dB gain and 53% PAE.

Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4250-SCC is readily assembled using automatic equipment.

Discontinued
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Key Features

  • Nominal Pout of 34 dBm at 8.5 GHz
  • Nominal gain of 8.5 dB at 8.5 GHz
  • Nominal PAE of 53% at 8.5 GHz
  • Suitable for high reliability applications
  • 4800 um x 0.5 um FET
  • Bias at 8 V, 384 mA
  • Chip dimensions: 0.61 x 1.37 x 0.1 mm (0.024 x 0.054 x 0.004 in)

Typical Applications

  • Cellular Base Stations
  • High Reliability Space
  • Military

Parameters

Frequency Min (MHz)
DC
Frequency Max (MHz)
10,500
Gain (dB)
8.5
Psat (dBm)
34
PAE (%)
53
Vd (V)
8
Idq (mA)
384
Package Type
Die
RoHS
Yes
Lead Free
Yes
Halogen Free
Yes
ITAR Restricted
No

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