TGF4260-SCC
DC - 10.5 GHz, 9.6 mm HFET Die
Key Features
- Frequency range: DC to 10.5 GHz
- 9600 um x 0.5 um HFET
- Nominal Pout of 37 dBm at 6 GHz
- Nominal gain of 9.5 dB at 6 GHz
- Nominal PAE of 52% at 6 GHz
- Suitable for high reliability applications
- Dimensions: 0.6 x 2.4 x 0.1 mm (0.024 x 0.093 x 0.004 in)
Qorvo's TGF4260-SCC is a single gate 9.6 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 6 GHz is 37dBm power output, 9.5 dB Gain, and 52% PAE.
Bond pad and backside metallization are gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes.
Typical Applications
- Cellular Base Stations
- High Reliability Space
- Military
Application Categories
- Applications> Customer Premises Equipment
- Applications> Defense & Aerospace> Communications
- Applications> Defense & Aerospace> Electronic Warfare
- Applications> Defense & Aerospace> Radar
- Applications> Defense & Aerospace> Space
- Applications> Network Infrastructure> Point-to-Point Radio
- Applications> Network Infrastructure> Satellite Communications
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 10,500 |
| Gain(dB) | 9.5 |
| Psat(dBm) | 37 |
| PAE(%) | 52 |
| Vd(V) | 8.5 |
| Idq(mA) | 768 |
| Package Type | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |