TQM7M5050
Quad-Band GSM / GPRS / EDGE-Linear Power Amplifier Module
End of Life announced December 12, 2017 (PCN 17-0208).
Last Time Buy Aug 5, 2019.
Contact your local sales representative for assistance.
Key Features
- Small 14-pin 5.0 x 3.5 x 0.9 mm module
- Input power controlled (predistortion required in EDGE mode)
- Low-Band has 2 modes – HBM and LBM
- High-Band has 2 modes – HBM and LBM
- Qorvo's GaAs HBT / CuFlipTM PA technology
- Built in CMOS controller
- Optimized for 50 ohm system
- MSL3 260°C / RoHS / Halogen-free
Qorvo's TQM7M5050 is fully matched input power controlled, multibias state, Quad-Band GSM/EDGE PAM designed for use with the Qualcomm multi-mode solutions supporting Linear EDGE. The PA output power is controlled by the input power coming from the transceiver in both GMSK and 8PSK modes and thus does not require a Vramp input. Additionally, the small 5 mm x 3.5 mm package requires minimum board space and allows for high levels of phone integration.
The TQM7M5050 is designed on Qorvo's advanced InGaP HBT GaAs technology with CuFlipTM assembly offering state of the art reliability, temperature stability and ruggedness.
Typical Applications
- GSM / EDGE / WEDGE Handsets
- GSM / EDGE / WEDGE Wireless Cards
Product Categories
| Standards | GSM, GPRS, EDGE, WEDGE |
| Bands | GSM850 / 900, DCS / PCS |
| Pout(dBm) | 35 |
| Gain(dB) | 28 |
| PAE(%) | 55 |
| Package(mm) | 5 x 3.5 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 5A991.B |