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Qorvo's UF4C120070K4S is a 1200 V, 72 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
AEC-Q101 qualification in process. Please contact Sales for more information.
VDS Max(V) | 1,200 |
RDS(on) Typ @ 25C(mohm) | 72 |
ID Max(A) | 27.5 |
Generation | Gen 4 |
Tj Max(°C) | 175 |
Automotive Qualification | No |
Package Type | TO-247-4L |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | EAR99 |
This product appears in the following application block diagrams: