1200 V, 60 mohm SiC FET

    Discontinued >

    Possible replacement: UJ3X120080X

    Key Features

    • On-resistance (RDS(on)): 60 mohm (typ)
    • Standard 12V gate drive w PV inverters
    • Maximum operating temperature: 150 °C
    • Excellent reverse recovery
    • Low gate charge
    • Low intrinsic capacitance

    Qorvo's UJC1206K is a 1200 V, 60 mohm RDS(on) SiC FET products co-package its xJ series high-performance SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. Available in a TO-247-3L package, these devices are excellent for switching inductive loads, and any application requiring standard gate drive.

    Typical Applications

      • EV Charging
      • PV Inverters
      • Switched-Mode Power Supplies
      • Power Factor Correction Modules
      • Motor Drives
      • Induction Heating
    VDS Max(V) 1,200
    RDS(on) Typ @ 25C(mohm) 60
    ID Max(A) 38
    Generation Gen 1
    Tj Max(°C) 150
    Automotive Qualification No
    Package Type TO-247-3L
    RoHS Yes
    Lead Free No
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99