QPA1011D
7.9 - 11 GHz, 25 Watt GaN Power Amplifier
Qorvo's QPA1011D is a X-band high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). The QPA1011D operates from 7.9 - 11 GHz and typically provides 25 W saturated output power with power-added efficiency of 37% and large-signal gain of 20 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost.
QPA1011D can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both CW and pulse operations.
The QPA1011D is matched to 50 ohm with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance and operational flexibility allows it support satellite communication and data links, as well as, military and commercial radar systems.
The QPA1011D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Key Features
- Frequency Range: 7.9 - 11 GHz
- PSAT: 45 dBm at PIN = 25 dBm
- PAE: 37 % at PIN = 25 dBm
- Large Signal Gain: 20 dB at PIN = 25 dBm
- Small Signal Gain: 26 dB
- Integrated Power Detector
- Bias: VD = 24 V, IDQ = 1200 mA, VG = -2.0 V Typical
- Pulsed VD: PW = 100 us, DC = 10%
- Chip Dimensions: 2.75 x 3.12 x 0.10 mm
Typical Applications
- Data Links
- Military and Commercial Radar
- Satellite Communications
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NotePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesGaAs and GaN Die Assembly and Handling Procedures
White Paper
Design Resources
Related Solutions
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