QPD0007
DC - 5 GHz, 20 Watt, 48 Volt, GaN RF Transistor
The QPD0007 is a single-path discrete GaN on SiC HEMT in a DFN package which operates from DC to 5 GHz. It is a single-stage, unmatched transistor capable of delivering P3dB of 20W at +48 V operation.
Lead free and RoHS compliant.
Key Features
- Operating Frequency Range: DC - 5.0 GHz
- Operating Drain Voltage: +48 V
- Maximum Output Power (P3dB) at 3.5 GHz: 20 W
- Maximum Drain Efficiency at 3.5 GHz: 73%
- Efficiency-Tuned Back Off Gain at 3.5 GHz: 19 dB
- 4.5 x 4.0 mm DFN Package
Typical Applications
- WCDMA / LTE
- Macrocell Base Station
- Microcell Base Station
- Small Cell
- Active Antenna
- 5G Massive MIMO
- General Purpose Applications
Parameters
Technical Documents
Design Resources
Related Solutions
Need more support?
At Qorvo, our customers are a core part of what we do, and we want every experience you have with us to be as reliable as our products. If you have a question or if something isn't working the way you expect, please let us know.
Forum
Engage with the Qorvo community, ask technical questions and share insights.
Support
Get technical, application or customer support plus updates on supply chain and FAQs.
Sales
Connect with our sales team to gain tailored solutions, expert guidance and access to the latest technologies.
